12483

11420

كارشناسي ارشد

مخابرات(ميدان)

اصفهان: دانشگاه صنعتي اصفهان، دانشكده برق و كامپيوتر

1396

سيزده،87ص.: مصور، جدول، نمودار

ص. ع. به فارسي و انگليسي

ابوالقاسم زيدآبادي نژاد

غلامرضا عسكري

ذاكر حسين فيروزه، محسن مداح علي

1396/03/23

كتابنامه

برق و كامپيوتر

مهندسي برق و كامپيوتر

ID11420

Design and Simulation of a High Power PIN Diode Phase Shifter in X band Behnaz Rashidi behnaz rashidi@ec iut ac ir April 19 2017 Department of Electrical and Computer Engineering Isfahan Unuversity of Technology Isfahan 84156 83111 Iran Degree M Sc Language Farsi Supervisor Assoc Prof Abolghasem Zeidaabadi Nezhad zeidabad@cc iut ac ir Abstract Phase shifters are important microwave devices They are used in a wide variety of applicationsincluding wireless satellite communications and radar systems The most important application of phase shifter isfound in phased array antennas which are often part of radar systems The number of phase shifters used in phased arrayantenna sometimes growsup to several thousands The main parameters of a phase shifter based on the needs of a radarsystem are specified such as operating frequency angle beam scanning transmitted power cost and production facility The most popular phase shifters used in phased array antennas are PIN diode phase shifters and ferrite phase shifters Ferrit phase shifters have high power handling capability and low insertion loss but switching speeds are low also aretemperature sensitive PIN diode phase shifters have advantages such as fast switching times low weights and lowcosts but in high frequency their insertion loss are high Still to design of high power devices rectangular waveguidespreferred over planar transmission lines such as microstrip and strip lines The SIW structures are waveguides that builton microstrip lines The SIW structures have the advantages of conventional metallic rectangular waveguide such ashigh Q and high power capacity and the advantages of microstrip lines such as small volume and light weight In last decade several phase shifters based on SIW technology have been designed and fabricated that most of themare fixed phase shift SIW has a closed structure therefore semiconductor devices such as PIN diode can connect themthrough a slot and design controllable SIW phase shifter that have high power handling compared with the commontransmission line phase shifters such switched line loaded line and reflection type In this thesis a PIN diode phase shifter based on SIW in X band is designed analyzed and simulated The SIWphase shifter consists of two layers which two coupling transverse slots are used to connect them and the structure isloaded with PIN diodes To achieve wider bandwidth transverse slots are used to couple the energy from bottom layerto the top layer The designed phase shifter is able to produce phase shifts of 11 25 22 5 45 and 90 in 0 8 GHzbandwidth In the frequency range from 11 to 12 5 GHz return loss and insertion loss are better than 10 dB and 1 3 dB respectively The peak power handling capability of the proposed phase shifter is about 2 kW Keywords PIN Diode Phase Shifter SIW Structure Power Handling Capability

ابوالقاسم زيدآبادي نژاد

غلامرضا عسكري

ذاكر حسين فيروزه، محسن مداح علي