13021

11899

كارشناسي ارشد

مخابرات ميدان و موج

اصفهان: دانشگاه صنعتي اصفهان، دانشكده برق و كامپيوتر

۱۳۹۶

يازده، ۷۷ص.: مصور، جدول، نمودار

ذاكرحسين فيروزه

ابوالقاسم زيدآبادي‌نژاد

رضا صفيان، احمد بخت افروز

1396/09/01

كتابنامه

برق و كامپيوتر

مهندسي برق و كامپيوتر

ID11899

Department Graduate Coordinator Dr M R Taban Improvement of millimeter wave FET modeling considering distributed effects Mohammad Azari Mohammad Azari@ec iut ac ir Date of submission Department of Electrical and Computer Engineering Isfahan University of Technology Isfahan 84156 83111 IranDegree M Sc Language FarsiSupervisor Zaker Hossein Firouzeh zhfirouzeh@cc iut ac ir Abstract Nowadays with the advancement of technology and increasing the use of integrated circuittechnology the need for more precise modeling of semiconductor devices especially transistors hasbeen increased Due to the nature of integrated circuits the precision for designing and reducing theneed for revision can drastically decrease cost and time One of the most important issuesencountered in the integrated circuits especially at millimeter wave frequencies is the inaccuracy ofthe compression assumption for transistors and the dominance of the effects of electromagneticwaves propagation In recent years considerable efforts have been devoted to modeling Among these efforts estimation of descriptive compressive structure behavior study with full wave analysis or with theapproximate transmission line model using numerical methods pseudo distributed analysis andanalytical solution derivation for differential equations of approximate transmission line model thenfinding approximate parameters for multi port transistors are more specific Each of the proposedmethods is subject to limitations Extracting an analytical model which has less structural constraintsand higher accuracy can increase the speed and accuracy of the design process Although theproposed analytical equations have been provided a simpler way to design than numerical methods these could not improve design process and required time In this thesis the analytical modeling has been considered and the corresponding relations fortransistor parameters extracted as an electrical network Also a compact model according to knowncircuit models has been proposed by adding parasitic elements This new model helps designers findhow the transistor geometry affects on these parasitic elements The extracted circuit model has beentested in quasi distributed simulations and compared with common methods It has been shownacceptable computational efficiency Also noise is a very important issue in radio and microwave systems Efforts have been made tosimulate distributed noise in transistors resulted in complex formulae In this work a compact circuitmodel was extracted and the validity range was investigated Index terms field effect transistor millimeter wave modeling noise compact model distributed circuit

ذاكرحسين فيروزه

ابوالقاسم زيدآبادي‌نژاد

رضا صفيان، احمد بخت افروز