پديد آورنده :
احمدي، ليلا
عنوان :
تحليل، طراحي و شبيه سازي تقويت كننده توان مايكروويو با پارامترهاي X
مقطع تحصيلي :
كارشناسي ارشد
گرايش تحصيلي :
مخابرات (ميدان)
محل تحصيل :
اصفهان: دانشگاه صنعتي اصفهان، دانشكده برق و كامپيوتر
صفحه شمار :
دوازده، ۱۰۱ص.: مصور، جدول، نمودار
استاد راهنما :
ابوالقاسم زيدآبادي نژاد
استاد مشاور :
ذاكر حسين فيروزه
واژه نامه :
انگليسي به فارسي
توصيفگر ها :
پارامترهاي X , طراحي تقويت كننده توان , مدلسازي غير خطي
استاد داور :
اصغر غلامي، رضا صفيان
تاريخ ورود اطلاعات :
1396/09/25
رشته تحصيلي :
برق و كامپيوتر
دانشكده :
مهندسي برق و كامپيوتر
چكيده انگليسي :
Analysis Design and Simulation of Microwave Power Amplifier Using X Parameters Leila Ahmadi l ahmadi@ec iut ac ir Decemder 3rd 2017 Department of Electrical and Computer Engineering Isfahan University of Technology Isfahan 84156 83111 Iran Degree M Sc Language Farsi Supervisor assoc prof Abolghasem Zeidaabadi Nezhad zeidabad@cc iut ac ir Abstract Efficiency enhancement for increasing battery lifetime and its effects such as decreasing cooling costs in communicationsystem base stations has driven RF devices including power amplifiers to operate in nonlinear regions Nonlinear behaviorof RF power amplifiers or RFPAs as one of the most important components of wireless transmitters usually limits the RFsystem s final performance So a new approach is required to extend linear behavior of PAs to nonlinear regions In recent decades there has been several approaches for modeling and designing power amplifiers In general all of themuse source and load reflection coefficients S L to design input and output matching networks These coefficients areset to achieve a specific aim such as maximum gain maximum output power minimum noise or a combination of them Oneof the most popular approaches is using scattering S parameters of the transistor But nonlinearly behaving transistor as aconsequence of the input power increasing can t be described by S parameters anymore In another words S parameterslose their validation in nonlinear regions Among all existing approaches for modeling analysis and simulation of nonlinear devices newly defined X parametersseems to be the best substitute for S parameters Just like S parameters X parameters model is capable of gatheringmeasurement modeling and simulation of RF components together in nonlinear region Despite all efforts made to achievean analytical framework to be used with CAD tools there isn t any complete procedure and designing is only availablewith soft wares like Advanced Design System ADS In this thesis classical S parameter analytical design frameworkhas been extended to nonlinear region using closed form expressions of input and output reflection coefficients based onX parameters Despite the classical small signal approach the cross frequency conversions and harmonic mismatch effectsare taken into account in this large signal method In the derivation of these expressions the incident and the scatteredwaves of the amplifier are all represented in a matrix structure After determination of stability boundaries and constantgain contours a typical power amplifier has been designed and the results are compared with those of ADS Key Words X parameters power amplifier design nonlinear modeling
استاد راهنما :
ابوالقاسم زيدآبادي نژاد
استاد مشاور :
ذاكر حسين فيروزه
استاد داور :
اصغر غلامي، رضا صفيان