پديد آورنده :
رشتيان، هومن
عنوان :
بررسي نويز فاز اسيلاتورهاي CMOS نوع LC و معرفي اثر نويز ناحيه ترايود ترانزسيتورهاي زوج ديفرانسيل در ايجاد آن
مقطع تحصيلي :
كارشناسي ارشد
محل تحصيل :
اصفهان : دانشگاه صنعتي اصفهان، دانشكده برق و كامپيوتر
صفحه شمار :
ده، 107، [II] ص. : مصور، جدول، نمودار
يادداشت :
ص. ع. به: فارسي و انگليسي
استاد راهنما :
رسول دهقاني
توصيفگر ها :
اجزاي RF , سيستم هاي مخابراتي , اسيلاتور محلي
تاريخ نمايه سازي :
23/7/1387
تاريخ ورود اطلاعات :
1396/09/04
دانشكده :
مهندسي برق و كامپيوتر
چكيده فارسي :
به فارسي و انگليسي: قابل رويت در نسخه ديجيتال
چكيده انگليسي :
AbstractThe exponential growth of wireless communication systems in recent years has initiated the needfor low noise low power and low cost wireless components To fulfill these requirements CMOStechnology is being used enormously for constructing RF blocks of communication systems and isgoing to replace its traditional GaAs and silicon bipolar counterparts This replacement has theadvantage of using the large implementation capacity of CMOS technology and providing theopportunity to fabricate all the analog digital and RF blocks of a system on a single chip which iscalled SoC System On a Chip Among different RF blocks designing a low phase noise VCO isof great concern because the phase noise of the local oscillator in a communication system is one ofthe most important parameters that can affect the quality of the signal This importance is sensedmore deeply in OFDM systems in which the modulation technique is highly sensitive to the phasenoise A great deal of time and effort has been spent to understand the sources of phase noise inoscillators but because of two reasons coming to a comprehensive conclusion is a very difficulttask 1 Large signal operation of the oscillators and inability to use linear small signal models 2 Time variant nature of phase noise generation during the oscillation period In this thesis different phase noise models and theories of CMOS LC oscillators as the most popular oscillatorsin RF applications are studied and a new model that considers the noise of differential pairtransistors in triode region is proposed This noise is usually ignored but by using this new model we improve the existing theory of phase noise in these oscillators and then we introduce a moreaccurate justification for performance of one of the most popular phase noise reduction techniques The conclusions are validated through the circuit simulations of a 3 6 GHz NMOS oscillator usinga 0 18 m technology in Agilent ADS 2005A
استاد راهنما :
رسول دهقاني
