4544

244 دكتري

دكتريمحمد

فيزيك

اصفهان: دانشگاه صنعتي اصفهان، دانشكده فيزيك

1387

[ نه] ، 112 ، [II] ، مصور ، جدول ، نمودار

ص. ع. به: فارسي و انگليسي

محمد رضا اجتهادي، محمد رضا محمدي زاده

فيزيك

ID244 دكتري

به فارسي و انگليسي: قابل رويت در نسخه ديجيتال

Ab initio study of semiconductor based nanostructures from heterostructures for spintronics to nanowires Nahid Ghaderi Jouybari nahid ghaderi@ts infn it March 4 2009 Department of Physics Isfahan University of Technology Isfahan 84156 83111 Iranakbarzad@cc iut ac irperessi@ts infn itjhashemifar@gmail comAbstract We have investigated the structural electronic and magnetic properties of some prototypicalexamples of GaAs based nanostructures We focus on two classes of nanostructures among the mostinteresting and relevant ones heterostructures for spintronics combinining GaAs with one materialacting as spin source injector such as the Heusler alloy Co MnSi undoped and Si doped GaAsnanowires The motivation for the choice of GaAs originates from the fact that the GaAs basedtechnology is nowadays well established and large e ort is devoted to the design of GaAs basedmodern electronic devices In this thesis we focus on the computational and theoretical modelingof GaAs based nanostructures Engineering complex materials and devices down to the nano scalestrongly requires an atomic scale investigation of their properties The contribution of computa tional theoretical studies is nowadays essential to their understanding thanks to predictive power ofstate of the art modelling techniques Ab initio electronic structure calculations are employed sincethe quantum mechanical behaviour of the electrons is explicitly relevant in these structures The

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