شماره مدرك :
5550
شماره راهنما :
324 دكتري
پديد آورنده :
علومي، امير عباس
عنوان :

مطالعه پارامتري خواص تشعشعي ساختارهاي چند لايه اي بسيار نازك

مقطع تحصيلي :
دكتري
گرايش تحصيلي :
مكانيك
محل تحصيل :
اصفهان: دانشگاه صنعتي اصفهان، دانشكده مكانيك
سال دفاع :
1389
صفحه شمار :
هجده،115ص.: مصور،جدول،نمودار
يادداشت :
ص.ع.به فارسي و انگليسي
استاد راهنما :
احمد صابونچي
استاد مشاور :
احمد صداقت
توصيفگر ها :
نيم رساناها , سيليكون
تاريخ نمايه سازي :
15/9/89
استاد داور :
حسين شكوهمند، محمود اشرفي زاده، محسن دوازده امامي، محمدرضا سليم پور
دانشكده :
مهندسي مكانيك
كد ايرانداك :
ID324 دكتري
چكيده فارسي :
به فارسي و انگليسي: قابل رويت در نسخه ديجيتالي
چكيده انگليسي :
Parametric Study of Nanoscale Radiative Properties of Multilayer Structures Seid Amir Abbas Oloomi Amiroloomi@me iut ac ir June 20 2010 Department of Mechanical EngineeringIsfahan University of Technology Isfahan 84156 83111 IranAhmad Saboonchi AhmadSab@cc iut ac irAhmad Sedaghat Sedaghat@cc iut ac irMehdi Keshmiri Department Graduate Program Coordinator AbstractThin film coatings play an important role in the semiconductor industries and microelectromechanical and nano electromechanical equipments In this paper the doped siliconwith donors and acceptors with different concentrations are studied and the dioxidesilicone thin film is compared at different temperatures From the results it is observed thatthe concentrations highly affect the radiative properties of doped silicon multilayer attemperatures below 600 K At temperatures below 600 K the concentration and the type ofimpurities have important effects on the radiative properties of the film Moreover theeffects of ions are considerable for the concentrations higher than 1016 cm 3 By increasingtemperature a lattice scattering phenomenon becomes dominant because of increasing theconcentration of the phonons For higher temperatures this effect is reduced due to fastermovement of energy carriers and a decrease in the Coulomb force between ions Moreinterestingly it is observed from the results that the reflectance for the wavelength about400 nm in the most cases is constant which offers a good choice for filtering ultravioletwaves Key WordsDoped Silicon Donors Acceptors Nanoscale Concentration and TemperatureIntroductionOptical techniques and radiative processes play important roles in current industry anddaily life Examples are advanced lighting and display materials and surfacecharacterization real time process monitoring and control laser manufacturing rapidthermal processing RTP communication data storage and reading radiation detection biomedical imaging and treatment ground and space solar energy utilization direct energyconversion etc Optical and thermal radiative properties are fundamental physicalproperties that describe the interaction between electromagnetic waves and matter fromdeep ultraviolet to far infrared spectral regions In fact optical property measurements andanalysis offer powerful tools to understand the physics of solids and other materials However optical and radiative properties depend on a large number of variables modelingof radiative properties of nano scale multilayer is a convenient way to analyze the observedresults Associate Professor Assistant Professor
استاد راهنما :
احمد صابونچي
استاد مشاور :
احمد صداقت
استاد داور :
حسين شكوهمند، محمود اشرفي زاده، محسن دوازده امامي، محمدرضا سليم پور
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