7452

6958

كارشناسي ارشد

الكترونيك

اصفهان: دانشگاه صنعتي اصفهان، دانشكده برق و كامپيوتر

1391

ده، 82ص.: مصور، جدول، نمودار

ص.ع. به فارسي و انگليسي

رسول دهقاني

25/10/91

مسعود سيدي، وحيد غفاري نيا

1396/09/22

كتابنامه

برق و كامپيوتر

مهندسي برق و كامپيوتر

ID6958

به فارسي و انگليسي: قابل رويت در نسخه دسجيتالي

Analysis and Design of Integrated Hall Effect Sensor Using MAGFET Ali Mosahebfard a mosahebfard@ec iut ac ir Date of Submission Department of Electrical and Computer Engineering Isfahan University of Technology Isfahan 84156 83111 Iran Degree M Sc Language Farsi Supervisor Rasoul Dehghani dehghani@cc iut ac ir Abstract Hall Effect sensors are usually preferred compared to other sensors like optical sensors although the later might be superior in terms of speed or accuracy This is because Hall sensors are generally more robust against environment contaminations and temperature variations Among various types of magnetic sensors Hall effect sensors receive special attention by industry because of their predictable behavior ability to sense field direction and being cost effective As Hall sensors are supposed to be employed in some complex applications it is necessary to integrate the sensor element with all signal conditioning circuits such as bias circuit amplifier filter etc on a single chip to achieve an economic fully integrated sensor Magneto sensitive Field Effect Transistor called MAGFET due to its compatibility with CMOS fabrication process is one of the most popular components that help to realize such idea In this research first the Hall effect phenomenon is described and then MAGFET is introduced and characterized in order to find important factors affecting the MAGFET sensitivity Temperature geometrical shape and dimensions MAGFET operating point and substrate type are the main parameters that affect the MAGFET sensitivity In addition several MAGFET structures including rectangular with different dimensions two and four blade sector shapes different gate oxide thicknesses and some other structures were designed and fabricated The different MAGFET parameters such as linearity electrical characteristic and sensitivity are measured for the fabricated samples The effect of oxide thickness drain gap and metal coverage on MAGFET sensitivity is studied The samples were fabricated in a 0 18 m CMOS technology and the maximum sensitivity was measured 2 5472 T for a two blade sector MAGFET implemented by thick gate oxide

رسول دهقاني

مسعود سيدي، وحيد غفاري نيا