پديد آورنده :
اسكندري، فاطمه
عنوان :
ساخت و بررسي تاثير آلايش A1 و تابش ليزر بر ويژگي هاي لايه نازك اكسيد روي
مقطع تحصيلي :
كارشناسي ارشد
محل تحصيل :
اصفهان: دانشگاه صنعتي اصفهان، دانشكده فيزيك
صفحه شمار :
ده،107ص.: مصور،جدول،نمودار
يادداشت :
ص.ع.به فارسي و انگليسي
استاد راهنما :
مهدي رنجبر، پرويز كاملي
استاد مشاور :
هادي سلامتي
توصيفگر ها :
لايه رساناي اكسيدي شفاف , سل ژل
تاريخ نمايه سازي :
20/7/92
استاد داور :
حسين احمدوند، اسماعيل عبدالحسيني
چكيده فارسي :
به فارسي و انگليسي: قابل رويت در نسخه ديجيتالي
چكيده انگليسي :
Preparation and investigation effect of Al doping and laser irradiation on properties of ZnO thin films Fateme Eskandari f eskandari@ph iut ac ir Date of Submission Department of Physics Isfahan University of Technology Isfahan 84156 83111 Iran Degree M Sc Language Farsi Supervisor Dr Mehdi ranjbar ranjbar@cc iut ac ir Dr Parviz Kameli kameli@cc iut ac ir Abstract In this thesis preparation and investigation of pure and Aluminum doped Zinc Oxide for use as transparent conductive oxide films of solar cells thin films Thus ZnO and AZO thin films 0 3 6 and 12 molar prepared by spincoating method and sol gel process on glass substrates After sample preparation the effect of annealing temperature the dopping Al and laser irradiation on surface of films investigated Study of structural properties of the samples confirmed hexagonal wurtzite for ZnO thin film annealed at it above 400 C XRD spectra of samples indicated the improvement in structural properties with increasing annealing temperature and after laser beam interacts with the sample surface Also this spectrum confirmed increasing in amorphous phase and decreasing in crystalline size with increased in Al content Surface morphology of samples studied by atomic force microscopy and field emission scanning electron Optical transmission spectra analysis investigated for all samples transmission over 80 Also calculated the band gap energy of ZnO and AZO thin films showed the effect of various parameters on the band gap energy changes PL spectra of the samples comfirmed the existence of structural defects such as oxygen vacancies and and interstitials Zn and showed the increasing in electron donors after laser irradiation The X ray photoelectron spectroscopy analysis showed oxygen vacancies for sample with 6 molar Al before and after laser irradiation Real time measurement of electrical conductivity during laser irradiation showed a transient photocoductivity effect for 0 at Al and annealing temperature below 450 C and persistent conductivity for 500 C Moreover a persistent conductivity was observed for almost all the AZO films For each sample types 0 12 at Al the persistent photoconductivity was higher at 500 C while the sample with 6 Al showed a high conductivity even at 450 C Reduce the electrical resistance of samples was attributed to create the electron donors after laser radiation Keywords Transparent conductivity oxide film Zinc oxide Thin film Sol gel Doped whit Al Laser irradiation PDF created with pdfFactory trial version www pdffactory com
استاد راهنما :
مهدي رنجبر، پرويز كاملي
استاد مشاور :
هادي سلامتي
استاد داور :
حسين احمدوند، اسماعيل عبدالحسيني
