RecordNumber
247
Doc. No.
273A
Call. No.
273A
Author
Rostami, A. A
Title of Article
Modified enthalay method applied to laser annealing of semi conductor films
Title Of Periodical
JOURNAL OF ENGINEERING ISLAMIC REPUBLIC OF IRAN
VolumNumber
V.8,No.3
Date
(1995)
Page
P.121-179
Abstract
The rapid melting of silicon film due to the absorption of CW laser beam radiation is studied. The silicon film melting and recrystallization is mainly controlled by the temperature distribution in the semiconductor. The enthalpy technipue for the solution of phase change problems is used in an explicit finite difference form to calculate the transient temperature distribution in the silicon film and the substrate and the growth rates of the melt pool. The technipue is modified so that it is not necessary to assign a constant temperature, Tm, to the mesh element that contains the melt front. Calculations are carried out for a range of laser beam parameters and material translational speeds. The results for the melt pool size are compared with the experimental data and reasonable agreement is obtained.
Indexer
77/03
IndexDate
Shahsavary
اطلاعات ثبت
GN129366