شماره مدرك :
15392
شماره راهنما :
1531 دكتري
پديد آورنده :
كهنوجي، حميده
عنوان :

شبيه سازي كوانتمي پوشش هاي مغناطيسي بر پايه كبالت روي نيمه رساناي دو بعدي دي سولفيد تنگستن

مقطع تحصيلي :
دكتري
گرايش تحصيلي :
ماده چگال
محل تحصيل :
اصفهان : دانشگاه صنعتي اصفهان
سال دفاع :
1398
صفحه شمار :
هشت 101ص.: مصور، جدول، نمودار
استاد راهنما :
جواد هاشمي فر
استاد مشاور :
مجتبي اعلايي
توصيفگر ها :
دي كالكوژنهاي فلزات واسطه , اسپينترونيك , تنش , مونت-كارلو , ترابرد كوانتومي , سد شاتكي , صافي اسپين
استاد داور :
محمدرضا محمدي زاده، حسن سبزيان، فرهاد فضيله
تاريخ ورود اطلاعات :
1398/10/14
كتابنامه :
كتابنامه
رشته تحصيلي :
فيزيك
دانشكده :
فيزيك
تاريخ ويرايش اطلاعات :
1398/10/21
كد ايرانداك :
2587906
چكيده انگليسي :
Abstract Transition metal dichalcogenide TMDC monolayers MLs have emerged as a promising 2D crystal family with several characteristic features Their direct band gap and the strong spin orbit coupling combined with the lack of inver sion symmetry leads to a unique coupling of the spin and valley degrees of free dom Due to this distinct feature elastic scattering of charge carriers is pos sible only by simultaneously flipping the spins of two carriers and this severe restriction leads to small intervalley scattering rates and therefore long spin and valley lifetimes These properties make the TMDCs promising candidates for na noelectronics and optoelectronics applications It is important to understand the conventional method to obtain stable magnetism in semiconductors TMDC ML Hence In the first part of this thesis we have studied a high Curie temperature ferromagnetic metal a cobalt monolayer on a single WS2 monolayer Density functional computations and Monte Carlo simulations are performed to investi gate structural electronic magnetic and thermodynamic properties of Co WS2 nanolayer a semiconductor WS2 monolayer covered by a ferromagnetic cobalt monolayer In addition to a conventional semilocal exchange correlation func tional three nonlocal functional including the novel ACBN0 scheme are applied to obtain reliable electronic and magnetic properties It is argued that the ACBN0 scheme is very efficient for first principles description of the Co WS2 nanolayer The obtained electronic structures evidence a trustworthy half metallic gap in the majority spin channel of the lowest energy configuration of the nanolayer promising for spintronic applications The obtained magnetic thermodynamics properties from Monte Carlo simulations predict a Curie temperature of about 110 K which is far small for device applications of this nanolayer The electronic and magnetic properties of the system are calculated under various compressive and tensile strains and it is shown that a tensile strain of about 4 may effec tively improve thermal stability of half metallic ferromagnetism in the Co WS2 nanolayer The second subject is to understand the nature of the electronic interface between metals and a TMDC monolayer Hence in this project we employ first principles computations to study the properties of the interface WS2 metal Slabs of the hexagonally close packed hcp metals Zr and Co are used to model the 0001 surfaces of Zr bulk or Co bulk which serve as templates to place the hexagonal layer of WS2 WS2 has attracted appreciable interest among TMDC MLs due to the presence of a high valence band splitting and a high mobility The atomic and electronic structure of single layer WS2 attached to Zr and Co contacts are determined We considered Zr and Co as suitable candidates for contact properties Zr emerges as an ideal candidate with only 1 5 mismatch to WS2 Co appears less suitable at first due to a large lattice mismatch but spin injection from such a high Curie temperature ferromagnetic metal to a single TMDC layer is very important since it would give access to TMDC based spintronic devices We observed that both metals form stable interfaces that are promising as contacts for injection of n type carriers into the conduction band of WS2 with Schottky barriers of 0 45 eV and 0 62 eV for Zr and Co respectively With the help of quantum transport calculations we address the conductive properties of a freestanding WS2 sheet suspended between two Zr contacts It is found that such a device behaves like a diode with steep I V characteristics Spin polarized transport is calculated for such a device with a floating gate Co electrode added Depending on the geometrical shape of the Co gate and the energy of the carriers in WS2 the transmission of spin majority and minority electrons may differ by up to an order of magnitude Thus the steep I V characteristics of the nanoscale device makes it possible to realize a spin filter Keywords Transition metal dichalcoge
استاد راهنما :
جواد هاشمي فر
استاد مشاور :
مجتبي اعلايي
استاد داور :
محمدرضا محمدي زاده، حسن سبزيان، فرهاد فضيله
لينک به اين مدرک :

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