پديد آورنده :
سيدان، فاطمه
عنوان :
ساخت لايه‌هاي نازك مغناطيسي CoPt3 به روش ليزرپالسي و بررسي ويژگي‌هاي مغناطيسي آن‌ها با استفاده از اثر مغناطواپتيكي كر
مقطع تحصيلي :
كارشناسي ارشد
محل تحصيل :
اصفهان : دانشگاه صنعتي اصفهان
صفحه شمار :
سيزده، 92ص. : مصور(رنگي)، جدول، نمودار
استاد راهنما :
حسين احمدوند
توصيفگر ها :
لايه هاي نازك CoPt3 , لايه نشاني ليزرپالسي , اثر مغناطواپتيكي كر , اثر هال غيرعادي
استاد داور :
محمدحسين احساني، حميده شاكري پور
تاريخ ورود اطلاعات :
1399/09/26
تاريخ ويرايش اطلاعات :
1399/09/29
چكيده انگليسي :
PLD growth of CoPt3 thin films and characterization of their magnetic properties by magneto optical Kerr effect Fatemeh Sayyedan fatemeh sayyedan@ph iut ac ir September 15 2020 Department of Physics Isfahan University of Technology Isfahan 84156 83111 IranDegree Master of Science Language FarsiSupervisor Hossein Ahmadvand Assist Prof ahmadvand@cc iut ac ir AbstractCoPt3 thin films due to their good magnetic properties such as perpendicular anisotropy and high coercivity canbe used in magnetic recording media with high density data Magnetic properties of the thin films depend onthe condition of deposition such as substrate temperature By control the condition we can reach the desirablefeatures In this study CoPt thin films was deposited by pulsed laser deposition PLD on PMN PT MgO Al2 O3 Quartz and Si substrates The influence of parameters such as deposition temperature film s thickness type of substrate and laser pulse repetition rate on the anisotropy and coercivity was investigated Magnetichysteresis loop of the films was measured using the magneto optical Kerr effect MOKE The thin films thatwas deposited on MgO indicated perpendicular magnetic anisotropy and significant coercivity The maximumcoercivity was found by deposition at 500 and 400 C which was equal to 4427 and 4037 Oe respectively Deposition on other substrates did not show perpendicular anisotropy Also CoPt3 thin films on Si substrateshows metal insulator transition which may be due to the diffusion of Co and Pt in Si substrate and formationof a tri metallic compound In this study anomalous Hall effect AHE was also measured for the thin filmsamples The maximum anomalous Hall resistance of the samples was found to be about 1 cm for filmdeposited on MgO at 400 C and with the laser pulse repetition of 10 Hz According to the structural studies high Hall resistance of these samples is probably due to the formation of Co clusters in the matrix of Platinumatoms Films with L12 structure exhibited lower anomalous Hall resistance KeywordsCoPt3 thin films Pulsed laser deposition PLD Magneto optical Kerr effect MOKE Anomalous Hall effect AHE
استاد راهنما :
حسين احمدوند
استاد داور :
محمدحسين احساني، حميده شاكري پور
