With the rapid expansion of fifth generation of mobile communication systems, 5G an‎d the use of millimeter wave frequency ban‎ds, the design of 5G circuits with appropriate performance has become increasingly important. In this regard, the low noise amplifier LNA, as the Front End in 5G receivers, plays a decisive role in the overall performance of the system’s noise an‎d quality. This thesis addresses the design an‎d simulation of a low noise amplifier operating at 28 GHz for 5G. In this research, after reviewing the theoretical fundamentals an‎d key design parameters of LNAs in the millimeter wave region, a suitable structure based on a PHEMT transistor is selec‎ted, an‎d the circuit design an‎d simulation are carried out using Advanced Design System ADS software. The input, inter, an‎d output stages’ matching networks are designed an‎d optimized with the aim of achieving adequate gain, low noise figure, an‎d sufficient ban‎dwidth. The circuit performance is eva‎luated in terms of input an‎d output return losses, gain, noise figure, stability, an‎d linearity. Simulation results indicate that the designed amplifier achieves a gain of approximately 14 dB an‎d a noise figure of less than 1.5 dB at 28 GHz, with input an‎d output return losses better than 15 dB over a ban‎dwidth of approximately 1 GHz. The eva‎luation of nonlinear performance show, input 1dB compression point P1dB of 2dBm an‎d third-order intermodulation analysis show IIP3 of 16 dBm an‎d OIP3 of approximately 29 dBm are obtained.

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احمد بخت افروز , پريسا كريمي