3133

2918

كارشناسي ارشد

فيزيك

اصفهان: دانشگاه صنعتي اصفهان، دانشكده فيزيك

1384

هفت، 51، [II] ص.: مصور

1396/02/31

كتابنامه

فيزيك

فيزيك

ID2918

به فارسي و انگليسي: قابل رويت در نسخه ديجيتالي

AbstractIn this thesis we have simulated Iron layer on Silicon substrate We used Espresso software in ourinvestigation We focused on two important directions in Silicon substrate 111 and 001 to ndthe best magnetic property for use in Spintronic applications SP spin polarization at Fermi levelwas calculated as an important factor which can be used as a criterion to nd high e ciency inspin injection According to calculated magnetization and DOS Densty of State graph for eachspecimen we nd that two destructive factors can demolish spin injection e ciency 1 Existance of Silicon s non polarized atomic orbitals at Fermi level 2 Broadening of Iron s polarized orbitals Both of them are seen in all specimens but it seems that along 111 direction we have bettermagnetic property because in this direction substrate and Iron layer both are more stable thancorresponding specimens along 001 direction and consequently they make a weaker joint So weface less broadening in Iron s magnetic orbitals

بهروز ميرزا

فرهنگ لران

منصور حقيقت، مهدي بارزي