3971

3749

كارشناسي ارشد

فيزيك

اصفهان: دانشگاه صنعتي اصفهان، دانشكده فيزيك

1386

[يازده]، 117، [II] ص.: مصور، جدول، نمودار

ص. ع. به فارسي و انگليسي

هادي اكبرزاده

محسن ذهبي

01/04/87

1396/03/08

كتابنامه

فيزيك

فيزيك

ID3749

به فارسي و انگليسي: قابل رؤيت در نسخه ديجيتال

AbstractOne of the intersting elds in spintronic is the injection of electron spin polarized current from aferromagnetic into a semiconductor A method to increase the ability of spintronic device is usingferromagnetic materialas a source of high spin polarized current Half metallic ferromagnetic with100 spin polarization at the Fermi level is an approprite candidate However the degree of spin po larization will be reduced by some factors such as interface states Hence studying interface betweenhalf metallic ferromagnetic and semiconductor and investigating in uence of interface on electronicand magnetic properties of ferromagnetics is so important CrSe compound with half metallic prop erties in bulk structure and high Curie temperature is a compound wich can be considered anappropriate source to produce spin current So we decided to study the interface of this half metallicwith CdS semiconductor In the second chapter as we are introducing spintronic science we reviewsome researches on this eld In the third chapter density functional theory pseudopotential theoryand some of programs in ESPRESSO softwares will be explained In fourth chapter the propertiesof bulk structure of CdS and CrSe in zinc blend structure are explored This clearly seen that theand result of bulk con rms half metallic property in this structure and nally in the last chapter wesimulate the interface of CrSeon CdS substrate and examine its magnetic and electronic propertiesby using quantum rst principle calculations based on density functional theory The results showthat although the half metalic property in the interface decrease but the degree of spin polarizationis rather high

هادي اكبرزاده

محسن ذهبي