پديد آورنده :
حضرتي، ابراهيم
عنوان :
بررسي خواص ساختاري، مغناطيسي و الكتروني مرز مشترك (Crse/znse(001
مقطع تحصيلي :
كارشناسي ارشد
محل تحصيل :
اصفهان: دانشگاه صنعتي اصفهان، دانشكده فيزيك
صفحه شمار :
[هشت]، 80، [II] ص.: مصور، جدول، نمودار
يادداشت :
ص. ع. به فارسي و انگليسي
استاد راهنما :
هادي اكبرزاده
استاد مشاور :
علي اكبر بابايي بروجني
توصيفگر ها :
جريان هاي قطبيده , ماده ي فرومغناطيس , تزريق اسپين , هگزاگونال , اسپينترونيك
تاريخ نمايه سازي :
18/04/87
استاد داور :
فرهاد شهبازي، جواد هاشمي فر
تاريخ ورود اطلاعات :
1396/03/08
چكيده فارسي :
به فارسي و انگليسي: قابل رؤيت در نسخه ديجيتال
چكيده انگليسي :
Abstract In study systems that work with spin polarized current injection spin polarized current from aferromagnetic into consideration system is very important On the other hand since semiconductorsare the main part in electronic devices spin injection from a ferromagnetic matter as a sourceof spin polarized current into a semiconductor devices attrected very interest In this case the interface between the ferromagnetic metal semiconductor have been investigated Schmidt Rashba and Fert noticed that the conductivity mismatch between a ferromagnetic metal and asemiconductor reduces the spin injection to a nearly undetectable level For solving this problemand also for increase the magnetoresistance of GMR and TMR devices a new group of ferromagnets half metals are very interested In this materials majority states are occupied at the Fermi energy minority states show a gap around EF which adds up to a spin injection current with 100 spinpolarization It is desirable to identify systems having geometrically coherent interfaces Thisobjective created recent interest in theoretical prediction and experimental testing of half metallicmetastable zinc blende structures made of compounds that are more stable in other structures These studies carried out for MnAs CrAs CrSb CrS CrSe and CrTe In this thesis by usingPWscf code rstly we investigated the bulk properties of CrSe in both NiAs and zinc blendestructures then we extracted the electronic magnetic and band discontinuing at the CrSe ZnSeinterface by using supercell method Our calculations indicate that the half metallic property preserved at the interface and the half metallic gap obtained 1 9 eV In continue we explainthe behaviour of partial density of states projected on interface atoms Finally by ploting thediscontinuig band calcu late the valance and conduction band o sets and conclude that themajority spins can be ipped before injected into semiconductor
استاد راهنما :
هادي اكبرزاده
استاد مشاور :
علي اكبر بابايي بروجني
استاد داور :
فرهاد شهبازي، جواد هاشمي فر
