پديد آورنده :
حسيني ساجدي، علي
عنوان :
شبيه سازي سنتز گرافن به روش رسوب دهي شيميايي بخار
مقطع تحصيلي :
كارشناسي ارشد
گرايش تحصيلي :
پديده هاي انتقال
محل تحصيل :
اصفهان: دانشگاه صنعتي اصفهان، دانشكده مهندسي شيمي
صفحه شمار :
سيزده، 73ص.: مصور، جدول، نمودار
يادداشت :
ص.ع. به فارسي و انگليسي
استاد راهنما :
محمد قريشي، جواد كريمي ثابت
توصيفگر ها :
رشد گرافن , پوشش سطحي , رسوب دهي شيميايي بخار , ديناميك سيالات محاسباتي , تجزيه متان
تاريخ نمايه سازي :
8/2/94
استاد داور :
محسن نصر اصفهاني، كيقباد شمس اسحاقي
تاريخ ورود اطلاعات :
1396/09/26
رشته تحصيلي :
مهندسي شيمي
چكيده انگليسي :
73Simulation of graphene synthesis via Chemical Vapor Deposition CVD Ali Hosseini Sajedi Ali hosseini68@ymail com Date of Submission 2015 01 18 Department of Chemical Engineering Isfahan University of Technology Isfahan 84156 83111 IranDegree M Sc Language FarsiSupervisors S M Ghoreishi ghoreshi@cc iut ac ir J Karimi Sabet javad karimisabet@gmail comAbstract Nowadays graphene is a famous material that most researchers are working on itsquality and domain size One of the common methods that we can synthesize graphenewith high quality and larger size is Chemical Vapor Deposition CVD method In CVDprocess for graphene formation reaction and process conditions affect the production rateof graphene Pressure temperature substrate and partial pressure of reactant are theseconditions that can vary along the CVD reactor Simulation of this process can helpscientists researchers and engineers in understanding developing and scale upping ofthese systems In this investigation several factors that can affect the synthesis of graphene by usingCVD has been studied For illustration these factors the process simulated by usingComputational Fluid Dynamic CFD method and the commercial software ANSYSFluent 13 The methane was used as hydrocarbon precursor in presence of hydrogen andargon as carrier gas with the flow rate of 0 5 5 and 100 sccm respectively The simulationwas performed in various pressures and the temperature was varied from 700 to 1000 C 21 gas phase reactions and 8 surface reactions were considered Among the various factorsthat have effects on the graphene growth the gas phase component the growthtemperature the operating pressure the inlet concentration of hydrocarbon precursor gasand substrate site that are more important was studied First the temperature and velocityprofiles in the reactor were illustrated and then the gas species were analyzed The resultshowed that at the beginning of the reactor reactions did not perform duo to the lowtemperature but with increasing temperature methane start to pyrolyze and produce severalspecies Among these species CH3 and H were studied because of their importance Thegraphene area coverage was considered as output parameter for studying how thetemperature the operating pressure the inlet concentration of hydrocarbon precursor andthe substrate site affect graphene growth The result showed that increasing thetemperature from 993 to 1273 K increase the graphene area coverage up to 77 percent Also with moving toward the end of the reactor the graphene area coverage increase Alsoincreasing the pressure first decreases the coverage then increases it In the case of the inletmethane concentration results showed that increasing the concentration increases thesurface coverage Finally by using the Surface Response Methodology and Box BehnkenDesign optimum condition for 100 percent coverage of graphene predicted for CVDprocess 1185 K 413 Pa and the inlet molar fraction of 0 009 for methane Keywords CVD Graphene growth Area coverage CFD Methane pyrolysis
استاد راهنما :
محمد قريشي، جواد كريمي ثابت
استاد داور :
محسن نصر اصفهاني، كيقباد شمس اسحاقي
